Tuesday, May 1, 2012

TriQuint Wins $12.3M DARPA Contract

RF semiconductor maker TriQuint Semiconductor said today that it has been selected for a $12.3M contract by the Defense Advanced Research Projects Agency (DARPA), to help develop mixed signal digital / RF GaAN circuits. The contract covers research at the firm's Richardson, Texas location, which is the headquarters for its Defense and Aerospace business. TriQuint said the program focuses on ultra-fast gallium nitride (GaN) switch technology, being applied to create highly-efficient RF transmitters which are substantially smaller than current solutions.